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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 097-098.
Microwave irradiation of gallium arsenide
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: re_rom@ukr.net
Abstract. To study an influence of the microwave irradiation on a spectrum of defect
states in semiconductor compound GaAs, we used measurements of luminescence
spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min)
treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and
surface power density 7.5 W/cm 2 . It was obtained that, already on the smallest irradiation
exposure, the spectra of defects in researched samples essentially changed as well as
concentrations of local centers changed. A "transfer" of intensity from the band with the
peak 1.04 eV to the that peaking at 1.3 eV was observed.
Keywords: luminescence, microwave irradiation, spectrum of defects.
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