Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 1. P. 001-003.

Calculation of electron mobility and effect of dislocation scattering in GaN
Janardan Kundu1, C.K. Sarkar2 and P.S. Mallick1

1Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761 008, India E-mail:
2Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700 032, India

Abstract. The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data.

Keywords: electron mobility, dislocation scattering, gallium nitride.

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