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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 10 N 1

Calculation of electron mobility and effect of dislocation scattering in GaN
Janardan Kundu, C.K. Sarkar, P.S. Mallick
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 001-003.
Abstract | Full text (PDF)

The radiation hardness of pulled silicon doped with germanium
A.P. Dolgolenko, G.P. Gaidar, M.D. Varentsov, P.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 004-012.
Abstract | Full text (PDF)

Qualitative analysis of electron states in nanoobjects
B.A. Lukiyanets
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 013-017.
Abstract | Full text (PDF)

The role of multicomponent surface diffusion in growth and doping of silicon nanowires
A. Efremov, A. Klimovskaya, D. Hourlier
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 018-026.
Abstract | Full text (PDF)

Using ion beams for creation of nanostructures on the surface of high-stable materials
I.V. Gorbov, V.V. Petrov, A.A. Kryuchyn
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 027-029.
Abstract | Full text (PDF)

A facile route for preparation of CdS nanoparticles
M. Maleki, M. Sasani Ghamsari, Sh. Mirdamadi, R. Ghasemzadeh
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 030-032.
Abstract | Full text (PDF)

Luminescence of the pyrazoline dye in nanostructured zeolite matrix
I.V. Beliak, V.G. Kravets, A.A. Kryuchin
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 033-035.
Abstract | Full text (PDF)

Template-based growth of TiO2 nanorods by sol-gel process
A. Sadeghzadeh-Attar, M. Sasani Ghamsari, F. Hajiesmaeilbaigi, Sh. Mirdamadi
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 036-039.
Abstract | Full text (PDF)

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 040-044.
Abstract | Full text (PDF)

The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovóch
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 045-048.
Abstract | Full text (PDF)

Polarization analysis of birefringence in uniaxially deformed silicon crystals
L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 049-054.
Abstract | Full text (PDF)

Calculation of the metal reflectivity with taking polarization into consideration
O.V. Vakulenko, V.S. Severin
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 055-059.
Abstract | Full text (PDF)

Graded refraction index antireflection coatings based on silicon and titanium oxides
Abdelhakim Mahdjoub
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 060-066.
Abstract | Full text (PDF)

ation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures
P.S. Kosobutskyy
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 067-071.
Abstract | Full text (PDF)

Electro-optical hybrid logic gates
Ekkurthi Sreenivasa Rao, M. Satyam, K. Lal Kishore
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 072-076.
Abstract | Full text (PDF)

1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes
Larysa Fenenko, Guoliang Mao, Akihiro Orita, Junzo Otera, Petro Smertenko, Georgi Svechnikov, Jun-ichi Nishide, Hiroyuki Sasabe, Chihaya Adachi
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 077-082.
Abstract | Full text (PDF)

Finite-difference time-domain method calculation of light propagation through H-PDLC
V. Kubytskyi, V. Reshetnyak
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 083-087.
Abstract | Full text (PDF)

Effect of oxidation of catalytically active silicon-based electrodes on water decomposition
V.E. Primachenko, O.A. Serba, V.A. Chernobai, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 088-096.
Abstract | Full text (PDF)

The current density order based on the Ginzburg-Landau description
Z. Bousnane, N. Merabtine, M. Benslama, F. Bousaad
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 097-100.
Abstract | Full text (PDF)

Entropic potential as manifold for the reduced entropy representations in superconductivity
Z. Bousnane, M. Benslama, N. Merabtine
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.1. P. 101-105.
Abstract | Full text (PDF)