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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 1. P. 040-044.
Fabrication of silicon grating structures using interference
lithography and chalcogenide inorganic photoresist
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Application of inorganic photoresist based on chalcogenide films for
fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
technology has been used for the fabrication of high-quality diffraction gratings on Si
(100) surface with symmetric triangular and trapezium grooves and two-dimentional
periodic structures. Relief parameters and diffraction properties of the obtained structures
and their dependences on etching time were determined.
Keywords: chalcogenide inorganic photoresist, interference lithography, diffraction
grating.
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