Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 1. P. 040-044.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
V.I. Min’ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of high-quality diffraction gratings on Si (100) surface with symmetric triangular and trapezium grooves and two-dimentional periodic structures. Relief parameters and diffraction properties of the obtained structures and their dependences on etching time were determined.

Keywords: chalcogenide inorganic photoresist, interference lithography, diffraction grating.

Full Text (PDF)

Back to N1 Volume 10