Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (1) P. 049-054 (2007).


1. M. Frokht, Photoelastisity (2 volumes) Vol. 1. ОGIZ, Moscow, 1948 (in Russian).
2. M. Born, E. Wolf, Principles of optics. Nauka, Moscow, 1970 (in Russian).
3. V.V. Mar'enko, B.H. Kolesnichenko, S.H. Savenkov, The automated system for research of polarized structure of an optical field, scattered by the natural objects // Optics of atmosphere and ocean 6, p. 1460-1464 (1993) (in Russian).
4. S.N. Jasperson, S.E. Sahnatterly, An improved method for high reflectivity ellipsometry based on a new polarization modulation technique // Rev. Sci. Instr. 40 p. 761-767 (1969).
5. B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko, The thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique // Semiconductor Physics, Quantum Electronics & Optoelectronics 2, p. 153-156 (1999).
6. Ye.V. Nikitenko, B.K. Serdega, Features of use of the polarization modulator in the optical schema for research birefringence // Optoelectronics and Semiconductor Technics (Naukova Dumka, Kyiv) No 33, p. 102-108 (1998) (in Russian).
7. D.E. Aspnes, J.P. Harbison, A.A. Studna, and L.T. Florez, Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs // J. Vac. Sci. Technol. A6, p. 1327-1332 (1988).
8. А. Jerard, J.M. Berch, Introduction in matrix optics. Mir, Мoscow, 1978 (in Russian).
9. J. Schmidt-Tiedemann, Experimental evidence of birefringence by free carriers in semiconductors // Phys. Rev. Lett. 7, p. 372-374 (1961).
10. W.C. Dash, F. Newman, Intrinsic optical absorption single-crystal Ge and Si at 77 and 300 K // Phys. Rev. 99, p. 1151-1155 (1955).
11. V.I. Nikitenko, G.P. Marninenko, Some photoelastic properties of gallium arsenide and silicon // Fizika Tverd. Tela 7, p. 622-624 (1965) (in Russian).
12. M. Chandrasekhar, M.H. Grimsditch, M. Cardona, Piezobirefringence above the fundamental edge in Si // Phys. Rev. B18, p. 4301-4310 (1978).