Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 1. P. 049-054.

Polarization analysis of birefringence in uniaxially deformed silicon crystals
L.I. Berezhinsky1, I.L. Berezhinsky2, V.I. Pipa1, I.Ye. Matyash1, B.K. Serdega1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: (38 044) 525-5778, e-mail:
2I. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine 3, Krzhyzhanovsky str., 03142 Kyiv, Ukraine, e-mail:

Abstract. The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance radiation are measured as a function of external pressure by using the method based on the modulation of radiation polarization. The value of the Brewster constant was obtained for absorption (λ = 0.63 µm) and transparence (λ = 1.15 µm) regions. The obtained experimental data are in a good agreement with calculation results based on the anisotropy model of dielectric properties within the framework of the Hook law. Shown is the practical importance of the polarization analysis in researching anisotropy of dielectric properties of materials.

Keywords: induced birefringence, polarization analysis, the Stokes vector.

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