Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 1. P. 026-028.


Spectral photosensitivity of the m-n 0-n structure on the basis of epitaxial layers
D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov

Physical-Technical Institute of the Scientific Association "Physics-Sun", Academy of Sciences of the Republic of Uzbekistan, 2B, Mavlyanov str., 700084 Tashkent, Uzbekistan Phone: +998-71-1331271, fax: +998-71-1354291, e-mail: karimov@uzsci.net

Abstract. The results of studies of the spectral characteristics of the m-n 0 -n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygen- doped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin active n-area, whose thickness is about the diffusion length, promote the greater photoresponse in the impurity spectral band (1.2 and 1.55 µm). At the same time, impurities present in GaInAs at the background level can be excited, although ineffectively, from the quasineutral part of the active region depleted by the blocking voltage.

Keywords: spectral characteristics, epitaxial layer, photocurrent, photodiode, active region, impurity.

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