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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 1. P. 026-028.
Spectral photosensitivity of the m-n
0-n structure
on the basis of epitaxial layers
Physical-Technical Institute of the Scientific Association "Physics-Sun",
Academy of Sciences of the Republic of Uzbekistan, 2B, Mavlyanov str., 700084 Tashkent, Uzbekistan
Phone: +998-71-1331271, fax: +998-71-1354291, e-mail: karimov@uzsci.net
Abstract. The results of studies of the spectral characteristics of the m-n 0 -n-structure
with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygen-
doped AlGaAs layers are presented. It is experimentally revealed that own defects and
oxygen impurities introduced into the thin active n-area, whose thickness is about the
diffusion length, promote the greater photoresponse in the impurity spectral band (1.2
and 1.55 µm). At the same time, impurities present in GaInAs at the background level
can be excited, although ineffectively, from the quasineutral part of the active region
depleted by the blocking voltage.
Keywords: spectral characteristics, epitaxial layer, photocurrent, photodiode, active
region, impurity.
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