Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (1) P. 026-028 (2008).
DOI: https://doi.org/10.15407/spqeo11.01.026


References

1. G.I. Haddad and R.J. Trew, Microwave solid-state active devices // IEEE Trans. Microwave Theory Techn. 50(3), р. 760-779 (2002).
https://doi.org/10.1109/22.989960
2. V.E. Lyubchenko, Physics and Technology of Millimeter Wave Components and Devices. Taylor and Francis, London, 2002.
3. I.N. Arsentyev, M.V. Baidakova, A.V. Bobyl, L.S. Vavilova, S.G. Konnikov, V.P. Ulin, N.S. Boltoves, R.V. Konakova, V.V. Milenin, D.E. Voitsikhovsky, Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of Au-Ti Schottky barriers to them // Pis'ma Zhurnal Tekhnich. Fiziki 28(17), p. 57-66 (2002) (in Russian).
https://doi.org/10.1134/1.1511769
4. S.V. Averin, Definition of the characteristics of the metal-semiconductor contact for counter-rod photodiode structures // Pis'ma Zhurnal Tekhnich. Fiziki 16(4), p. 49-53(1990) (in Russian).
5. H.C. Casey and M.B. Panish, Heterostructure Lasers. Academic Press, New York, 1978.
https://doi.org/10.1016/B978-0-12-163102-4.50008-7
6. A.B. Karimov, M. Mirzabaev, Sh.Z. Mirtursunov, N.F. Muhitdinova, Liquid epitaxy device // Inventors' certificate No. 913759, Intern. cl. C 30B 19/06, Nov. 16, 1981.
7. G.I. Jovnir, V.F. Kovalenko, V.A. Krasnov, I.E. Maronchuk, Liquid phase epitaxy of threecomponent solid solutions in the Al-Ga-In-As system // Zhurnal Tekhnich. Fiziki 56(9), р. 1814- 1815 (1986) (in Russian).