Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 1. P. 075-078.

Research of the photo-voltaic effect in the two-base Ag-N0AlGaAs-n+GaAs-n0GaInAs-Au structure with various thicknesses of a base
D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova

Physical-Technical Institute of the Scientific Association “Physics-Sun”, Academy of Sciences of the Republic of Uzbekistan, 2B, Mavlyanov str., 700084 Tashkent, Uzbekistan Phone: +998-71-1331271, fax: +998-71-1354291; e-mail:

Abstract. The results of research of photoelectric phenomena in the two-base Ag- N 0 AlGaAs-n + GaAs-n 0 GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of the photo EMF created by the separation of photocarriers in the energy barrier and from the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s barrier under photovoltaic conditions is offered.

Keywords: iso-type junction, heterolayer, two-base structure, barrier, photovoltaic effect.

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