Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (1) P. 075-078 (2008).
DOI: https://doi.org/10.15407/spqeo11.01.075


References

1. S.V. Averin, Definition of the characteristics of the metal-semiconductor contact for counter-rod photodiode structures // Pis'ma Zhurnal Tekhnich. Fiziki 16, No. 4, p. 49-53 (1990) (in Russian).
2. S.V. Averin, E.A. Azatyan, Yu.V. Gulyaev, M.D. Dmitriyev, V.E. Lyubchenko, I.V. Petrenko, Yu.N. Sveshnikov, Diodes with Mott's barrier on n-GaAs epitaxial films // Doklady Academii Nauk SSSR 277, No. 5, p. 1124-1125 (1984) (in Russian).
3. S.V. Averin, A. Kohl, R. Muller, Mesquida Kusters A., J. Wisser, K. Heime, n-Ga0.47In0.53As low dark current high-speed MSM photodetectors // Radiotekhnika i elektronika 38, No. 5, p. 959-944 (1993) (in Russian).
4. A.M. Filachev, V.P. Ponomarenko, I.I. Taubkin et al., Photoreceivers and photoreceiving devices for the reception of pulse radiation in a spectral range 0.3-11 µm // Prikladnaya Fizika No 6, p. 52-60 (2002) (in Russian).
5. M.A. Akhmedoglu, I.A. Andreyev, E.V. Kunitsyna, M.P. Mihaylova, Yu.P. Yakovlev, Electrical properties of iso-type heterojunctions N+ -GaSb/n0 - GaInАsSb/N+ -GaAlAsSb of the 2nd type // Fizika i tekhnika poluprov. 41, No. 2, p. 154-159 (2007) (in Russian).
https://doi.org/10.1134/S1063782607020066
6. D.M. Yodgorova, F.M. Ashrapov, Research of admixed photoeffect in two-barrier p-n-m structures // Tekhnologiya i konstruir. electron. apparat. 3(63), p. 40-47 (2006) (in Russian).
7. A.Ya. Nashelsky, Manufacture of Semiconductor Materials. Moscow, Metallurgy, 1989, p. 63-65.
8. D.M. Yodgorova, F.A. Giyasova, A.V. Karimov, A.A. Yakubov, Thermophoto-voltaic effect in a structure with Schottky barrier // Proc. of the Conference "Problems of alternative power and energy-saving". Namangan, September 25-26, 2007, p. 155-156.