References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (1) P. 012-016 (2009).
DOI: https://doi.org/10.15407/spqeo12.01.012

References

1. Y, Hamakawa, A technological evolution from bulk crystalline age to multilayers thin film age in solar photovoltaics // Renewable Energy 15, p. 22-31 (1998). https://doi.org/10.1016/S0960-1481(98)00132-3

2. M.W.M. van Cleef, F.A. Rubinelli, JK. Rath, RELL. Scropp, W.F. van der Weg, R. Rizzoli, C Summonte, R. Pinghini, E. Centurioni and R. Galloni, Photocarrier collection in a-SiC:H/c-Si heterojunction solar cells // J. Non-cryst. Solids 227-230, p. 1291-1294 (1998). https://doi.org/10.1016/S0022-3093(98)00210-5

3. M.W.M. van Cleef, F.A. Rubinelli, R. Rizzoli, R. Pinghini, R.E.J. Schropp and W.F. van der Weg, Amorphous silicon carbide/erystalline Silicon heterojunction solar cells: a comprehensive study of the photocarrier collection // Jpn. J. Appl. Phys. 37, p. 3926-3932 (1998) https://doi.org/10.1143/JJAP.37.3926

4. J. Pallares and R.E.I. Schropp, Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells // J.Appl. Phys. 88, p. 293-299 (2000). https://doi.org/10.1063/1.373656

5. V.I. Ivashchenko, P.E.A. Turchi, V.1. Shevchenko, L.A. Ivashchenko, and G. V. Rusakoy, Atomic and electronic structures of a-SiC:H from tight binding-molecular dynamics // J. Phys: Condens. Matter, 15, p. 4119-4126 (2003). https://doi.org/10.1088/0953-8984/15/24/305

6. V. Cech, Modeling of the 1-V characteristics in amorphous silicon n'-i-n" devices // J. Appl. Phys. 88, p. 9374-5380 (2000) https://doi.org/10.1063/1.1314309

7. I. Chan and S. Lee, On the current-voltage characteristics of amorphous hydrogenated silicon diodes // J, Appl. Phys, 53, p. 1045-105 (1982) https://doi.org/10.1063/1.330549

8. P. Sichanugris, M. Konagi and K. Takahashi, Theoretical analysis of amorphous silicon solar cells: Effects of interface recombination // J. Appl. Phys, 38, p. 1155-1161 (1984). https://doi.org/10.1063/1.333209

9. P. Cova, A. Singh and R.A. Masut, Simultaneous analysis of current-voltage and capacitance-voltage characteristics of metal-insulator-semiconductor diodes with a high mid-gap trap density // J. Appl. Phys. 85, p. 6530-6538 (1999). https://doi.org/10.1063/1.370157

10. H.Z. Fardi, D.W. Winston, R.E. Uayes, M.C, Hanna il IEEE Trans. Electron Devices 47, p.915-919(2000). https://doi.org/10.1109/16.841221