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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 012-016.
Computer analysis of a-SiC:H/c-Si heterojunction solar cells
Frantselych Institute of Problems of Material Science, NAS of Ukraine, 3, Krzhyzhanovsky str., 03142 Kyiv, Ukraine, e-mail: ivash@ipms.kiev.ua
Abstract. computer model to simulate hybrid solar cells based on hydrogenated amorphous silicon carbide (a-SiC:H) and crystalline silicon (c-Si) was developed. Using the developed approach, the current-voltage characteristics of p(n) a-SiC:H/n(p) c-Si heterojunction solar cells were analyzed. It was shown that the maximum cell efficiency of the p-n and n-p tandems is observed for the amorphous layer thickness — 0.03-0.06 pun and 0.01-0.03 pm, respectively. The efficiency of the n-p heterojunctions is found to be higher than that of the p-n tandem by approximately 1.5 %. This is attributed to the fact that, in n-doped a-SiC:H, the conductive band tail is narrower compared to the valence band one in p-doped films. The simulated results are compared with the available experimental data obtained with a-SiC:H/c-Si heterostructures.
Keywords: amorphous silicon carbide, hybrid heterojunction solar cells, computer analysis, current-voltage characteristics.
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