Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (1) P. 035-041 (2009).
DOI:
https://doi.org/10.15407/spqeo12.01.035
References
Е.Е. Khawaja, MA. Al-Daous, S.M.A. Durrani etal, Chemical inhomogeneity in zinc telluride thin films prepared by thermal evaporation // Thin Solid Films 485, p. 16-21 (2005). https://doi.org/10.1016/j.tsf.2005.03.033 | | 2. Т.А. Gessert, А.К. Mason, R.C. Reedy et 31., Development of rf sputtered, Cu-doped ZnTe for use as a contact interface layer to p-CdTe // J. Eleclr. Mater. 24 (l0), p. 1443-1449 (1995). https://doi.org/10.1007/BF02655462 | | 3. R. Bhargava, Properties of Wide Band Gap lI-VI Semiconductors. The Institution of Electrical Engineers, London, United Kingdom, 1997. | | 4. RA. Panchekha, Structure and technology problems of AzBs semiconductor films // Functional Material: 7(2), p. 1-5 (2000). | | 5. АЕ. Rakhshani, B. Pradeep, Thin films of ZnTe electrodeposited on stainless steel // Appl.Phys. 79, p. 2021-2025 (2004). https://doi.org/10.1007/s00339-003-2389-9 | | 6. T. Mahalingam, V.S. John. G. Ravi, Р.]. Sebastian, Microstructural characterizalion of electro-synthesized ZnTe thin films // Cryst. Res. Technol. 37(4), p. 329-339 (2002). https://doi.org/10.1002/1521-4079(200204)37:4<329::AID-CRAT329>3.0.CO;2-U | | 7. H. Bellakhder, A. Outzourhit, Е. Ameziane, Stady onnTe thin films deposited by г.f. sputtering // Thin Solid Films 382, p. 30-33 (2001). https://doi.org/10.1016/S0040-6090(00)01697-7 | | 8. A. Erlacher. AR. Lukaszew etal., Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition // Surf. Sci. 600, р. 3762-3765 (2006). https://doi.org/10.1016/j.susc.2006.02.061 | | 9. А.А. Ibrahim, NZ, El-Sayed, М,А, Kaid ес al., Structural and electrical properties of evaporated ZnTe thin films // Vacuum 75, р, 189-194 (2004). https://doi.org/10.1016/j.vacuum.2004.02.005 | | 10. J. Takahashi, K. Mochizuki, K. Hitomi et 211., Growth ode1.xanTe film by hot-wall method and its evaluation // .! Cryx, Growth 269, p. 419-424 (2004). https://doi.org/10.1016/j.jcrysgro.2004.05.054 | | 11. A. Lopez~0tero, Hot wall epitaxy, Invited Review // Thin Solid Films 49, p. 3-57 (1978). https://doi.org/10.1016/0040-6090(78)90309-7 | | 12. Р. Kalinkin, V.B. Alescovskiy, A.V. Simash-kevich, A235 Epitaxial Thin F ilms. Leningrad State University, Leningrad, 1978 (іп Russian). | | 13. Y.P, Venkata Subbalah, P. Ришар, К.Т. Ramakrish-na Reddy, Structural, electrical and optical properties of ZnS films deposited by close-spaced evaporation // Appl. Surf Sci. 253. p. 2409-2415 (2006). https://doi.org/10.1016/j.apsusc.2006.04.063 | | 14. P. Prathap, Y.P. Venkata Subbaiah, К.Т, Ra-makrishna Reddy, R.W. Miles, Influence of growth rate on microstructure and optoelectronic behaviour of ZnS film // J. Phys. D: Appl. Phys. 40, p. 5275-5282 (2007). https://doi.org/10.1088/0022-3727/40/17/039 | | 15. Y.S. Umanskiy, U.A. Skakov, А.М. Ivanov, Crystallography X-ray Diflraction and Electron Microscopy. Publ. Metallurgiya, Moscow, 1982 (in Russian). | | 16. В.Е. Warren, X-ray Diflraction. Dover, New York, 1990. | | 17. AS. Казан, L.M. Shishlyannlkova, AP. Unlcel, Application the three-fold convolution approximation method of profiles X-ray diffraction lines // Zavodskaya Iabaratoriya 46 (10), р. 903-906 (1980) (іп Russian). | | 18. J. Pankov, Optical Processes in Semiconduclurs. Mir, Moscow, 1973 (іп Russian). | | 19. S. Danilchenko, Т. Kalinichenko, M. Kolesnik еt al., Structural characteristics of ZnTe thin films obtained by close-spaced vacuum sublimation technique // Visnyk Sumskogo Derzhavnogo Universyteru 1, p. 117-123 (2007) (in Ukrainian). | | 20. R. Amutha, А. Subbarayan R. Sathyamoorthy, Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films // Стул Res. Technol. 41 (12) р. 1174-1179 (2006). https://doi.org/10.1002/crat.200610744 | | 21. L. Fang, D. Mao, J. Tang, КТ, Collins, 1U. Thefny, The structural, optical and electrical propenies of vacuum evaporated Cu-doped ZnTe polycrystalline thin films // J. Electr. Mater. 25 (9), p. 1422-1427 (1996). https://doi.org/10.1007/BF02655377 | | 22. LS. Palatnik, MJa Fuks, V.M. Kosevich, Creation Mechanism and Substructure 0f Condensed Thin Films. Nauka, Moscow, 1972 (іn Russian). | | 23. N.К. Morosova, 1.А. Karetnikov, K.V. вошь, N.D. Danilevich, V.M. Lisitzyn, V,I. Oleshko, The action of oxygen on ZnS electronic band structure // Fizika tekhnikapaluprovodnikov 39 (5), р. 513-520 (2005) (іn Russian). https://doi.org/10.1134/1.1923552 | |
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