References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (1) P. 042-046 (2009).
DOI: https://doi.org/10.15407/spqeo12.01.042

References

1. J.J. Wortman, J.R. Hauser, and R.M. Burger, Effect of mechanical stress on p-n junction device characteristics // J. Appl. Phys. 35(7), p. 2122-2131 (1964). https://doi.org/10.1063/1.1702802

2. Y. Kanda, Effect of stress on germanium and silicon p-n junction // Jpn. J. Appl. Phys.6(4), p. 475-486 (1967). https://doi.org/10.1143/JJAP.6.475

3. J.F. Creemer and P.J.French, The piezojunction effect in bipolar transistos at moderate stress level: a theoretical and experimental study // Sensors and Actuators A 82(1-3), p. 181-185 (2000). https://doi.org/10.1016/S0924-4247(99)00362-3

4. V.L. Borblik, Yu.M. Shwarts, and E.F. Venger, Effect of mechanical stress on operation of diode temperature sensors // Semiconductor Physics, Quantum Electronics & Optoelectronics 5(3), p. 322-327 (2002).

5. V.L. Borblik, Yu.M. Shwarts, and E.F. Venger, About manifestation of the piezojunction effect in diode temperature sensors // Semiconductor Physics, Quantum Electronics & Optoelectronics 6(1), p. 97-101 (2003).

6. J.F. Creemer and P.J. French, The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure // J. Appl. Phys. 96(8), p. 4530-4538 (2004). https://doi.org/10.1063/1.1789269

7. J.-S. Lim, S.E. Thompson, and J.G. Fossum, Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs // IEEE Electron Device Lett.25(11), p. 731-733 (2004). https://doi.org/10.1109/LED.2004.837581

8. M.P.F. de Godoy, M.K.K. Nakaema, F. Iikawa, W. Carvalho, Jr., E. Ribeiro, and A.L. Gobbi, Biaxial stress ring applications to magneto-optical studies of semiconductor films // Rev. Sci. Instr. 75(6), p. 1947-1951 (2004). https://doi.org/10.1063/1.1753090

9. S. Maikap, C.-Y. Yu, S.-R. Jan, M.H. Lee, C.W. Liu, Mechanically strained strained-Si nMOSFETs // IEEE Electron Device Lett.25 (1), p. 40-42 (2004). https://doi.org/10.1109/LED.2003.821671

10. B.M. Haugerud, M.B. Nayeema, R. Krithivasan, Y. Lu, C. Zhu, J.D. Cressler, R.E. Belford, and A.J. Joseph, The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology // Solid-State Electronics 49(6), p. 986-990 (2005). https://doi.org/10.1016/j.sse.2005.03.019

11. F.J. Beisswanger and H. Jorke, Electron transport in bipolar transistors withbiaxially strained base layers // IEEE Trans. Electron Devices 43 (1), p. 62-69 (1996). https://doi.org/10.1109/16.477594

12. E. Anastassakis, Strained superlattices and heterostructures: Elastic consideration // J. Appl. Phys. 68 (9), p. 4561-4568 (1990). https://doi.org/10.1063/1.346162

13. H. Hasegawa, Theory of cyclotron resonance in strained silicon crystals // Phys. Rev. 129(3), p. 1029-1040 (1963). https://doi.org/10.1103/PhysRev.129.1029

14. J.C. Hensel and G. Feher, Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials // Phys. Rev. 129(3), p. 1041-1062 (1963). https://doi.org/10.1103/PhysRev.129.1041

15. K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki, and N. Usami, Changes in elastic deformation of strained Si by microfabrication // Mater. Sci. Semicond. Process. 8(1-3), p.181-185 (2005). https://doi.org/10.1016/j.mssp.2004.09.037

16. T.K.S. Wong, Y. Gong, P. Yang, and C.M. Ng, Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering // Semicond. Sci. Technol. 22(11), p. 1232-1239 (2007). https://doi.org/10.1088/0268-1242/22/11/009

17. N. Hirashita, Y. Moriyama, N. Sugiyama, E. To-yoda, and S. Takagi, Strainrelaxation in strained-Si layers on SiGe-on-insulator substrates // Semicond. Sci. Technol. 22(1), p. S21-S25 (2007). https://doi.org/10.1088/0268-1242/22/1/S05

18. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld, Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors // J. Appl. Phys. 97(1), 011101/1-27 (2005). https://doi.org/10.1063/1.1819976

19. B.M. Haugerud, L.A. Bosworth, and R.E. Belford, Elevated-temperature electrical characteristics of mechanically strained Si devices // J. Appl. Phys.95(5), p. 2792-2796 (2004). https://doi.org/10.1063/1.1644637

20. M.V. Fischetti and S.E. Laux, Band structure, deformation potentials and carrier mobility in strained Si, Ge, and SiGe alloys // J. Appl. Phys.80(4), p. 2234-2252 (1996) https://doi.org/10.1063/1.363052