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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 042-046.
Properties of junction diodes under conditions
of bisotropic strains
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044)525-6292, fax: +38(044)525-7463
Abstract. In consideration of influence of technological strains on characteristics of
junction diodes located on surface of silicon wafers, biaxial character of such strains has
taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
surface the diodes are located as well as longitudinal (in plane of the wafer) and
transversal (perpendicular to it) diode current flow have been considered. It is shown that
at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
to increase by several orders of magnitude irrespective of the strain sign.
Keywords: junction diode, bisotropic strain, piezojunction effect, silicon, SiGe alloy.
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