Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 053-056.

Charge storage characteristics of gold nanoparticles embedded in alumina matrix
O. Bratus’, A. Evtukh, E. Kaganovich, A. Kizjak, I. Kizjak, E. Manoilov

V. Lashkaryov Institute of Semiconductor Physics, 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. The processes of charge accumulation in the nonvolatile memory metal-oxide- silicon capacitors with gold nanoparticles floating gate formed by the pulsed laser deposition method are investigated. The regularities of formation of alumina films with gold nanoparticles are the result of their deposition from the back flow of low-energy particles from the erosion torch. With removing from the torch axis, sizes of gold particles and the film thickness decreased. When recording the capacitance-voltage curves, the capture of a negative charge was observed. It was shown that the concentration of gold nanoparticles in alumina matrix and the thickness of nanocomposite films remarkably influenced on the stored charge. The observed flat band voltage shift was in the range 1 to 14 V. To explain the peculiarities of charge storage in the composite films, the electron transport through them was investigated.

Keywords: gold nanoparticle, alumina matrix, nanocomposite film, stored charge, electron transport.

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