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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 12 N 1
DOI: https://doi.org/10.15407/spqeo12.01

Photosensitive in wide spectral region composites based on polyphenylenevinylene
V. Syromyatnikov, I. Pomaz, A. Verbitsky, Ya.Vertsimakha,S. Nespurek, S. Pochekaylov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 001-007.
Abstract | Full text (PDF)

Optical properties of gold nanostructures obtained with laser methods
E.B. Kaganovich, I.M. Kizyak, A.A. Kudryavtsev, E.G. Manoilov, Ye.V. Begun
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 008-011.
Abstract | Full text (PDF)

Computer analysis of a-SiC:H/c-Si heterojunction solar cells
V.I. Ivashchenko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 012-016.
Abstract | Full text (PDF)

Influence of the isotopic composition on emission spectra of XeCl molecules
I.A. Pavlov, N.G. Zubrilin, S.I. Osypov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 017-022.
Abstract | Full text (PDF)

Transport of low-energy electrons in non-degenerate n-InSb under longitudinal magnetic field
S. Abboudy, K. Alfaramawi, L. Abulnasr
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 023-026.
Abstract | Full text (PDF)

A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs
T. Bendib, F.Djeffal, M. Maguellati, A. Benhaya, M. Chahdi
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 027-030.
Abstract | Full text (PDF)

Water-sorption effects in nanoporous MgAl2O4 ceramics for humidity sensors
H. Klym, A. Ingram, O. Shpotyuk, I. Hadzaman
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 031-034.
Abstract | Full text (PDF)

The substructural and optical characteristics of ZnTe thin films
M.. Kolesnyk, D.I. Kurbatov, .S. Opanasyuk, V.B. Loboda
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 035-041.
Abstract | Full text (PDF)

Properties of junction diodes under conditions of bisotropic strains
V.L. Borblik
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 042-046.
Abstract | Full text (PDF)

Specific thermoemf and Hall-effect in crystals with monopolar conductivity
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 047-052.
Abstract | Full text (PDF)

Charge storage characteristics of gold nanoparticles embedded in alumina matrix
O. Bratus', A. Evtukh, E. Kaganovich, A. Kizjak, I. Kizjak, E. Manoilov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 053-056.
Abstract | Full text (PDF)

Testing of optical methods by using the multi-level holographic gratting
.I.Barchuk, Y.V.Braginets, O.S.Klimov, Y.A.Oberemok, S.N.Savenkov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 057-063.
Abstract | Full text (PDF)

Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics
V.S. Kiselov, V.I. Poludin, M.P. Kiselyuk, T.. Kryskov, A.E. Belyaev
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 064-067.
Abstract | Full text (PDF)

Effect of Si infiltration method on the properties of biomorphous SiC
V.S. Kiselov, E.N. Kalabukhova, A.A. Sitnikov, P.M. Lytvyn, V.I. Poludin, V.O. Yukhymchuk, A.E. Belyaev
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 068-071.
Abstract | Full text (PDF)

Bi2Te3-Sex Ag ( = 0.04) nanocrystal formation
F.K. Aleskerov, S.K. Kahramanov, .. Asadov, K.S. Kahramanov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 072-076.
Abstract | Full text (PDF)

Estimation of photodiode frequency characteristics determined by motion of charge carriers in the space charge region. The case of even generation of carriers
Yu.G. Dobrovolskiy, A.I. Danilyuk
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 077-082.
Abstract | Full text (PDF)

Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures
R. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 083-085.
Abstract | Full text (PDF)

Light depolarization by inhomogeneous linear birefringent media
S.N. Savenkov, Y.A. Oberemok, V.V. Yakubchak, Y.V. Aulin, .I. Barchuk
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 086-090.
Abstract | Full text (PDF)

Detection of biomolecules using optoelectronic biosensor based on localized surface plasmon resonance. Nanoimprint lithography approach
V. Chegel, B. Lucas, J. Guo, A. Lopatynskyi, O. Lopatynska, L. Poperenko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 091-097.
Abstract | Full text (PDF)

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.1. P. 098-104.
Abstract | Full text (PDF)