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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 068-071.
Effect of Si infiltration method on the properties
of biomorphous SiC
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
*Corresponding author
− fax: 38 (044)-525-59-40; e-mail: vit_kiselov@ukr.net
Abstract. Two types of wood-based biomorphous SiC composites with different
microstructure were obtained by infiltration of carbon template with liquid or vapour
silicon. The oak, pine, lilac, walnut, acacia woods available in Ukraine were used as the
biological template in this work. SEM, optical and AFM data indicated that biomorphous
SiC obtained by melt infiltration consists of crystalline phase of 3C-SiC, while that of
vapor infiltration results in formation of crystalline and amorphous phases of 3C-SiC.
The same results were obtained for infiltration of carbon fibers. Thus, it was suggested
that the mechanism of SiC formation is governed by the infiltration method.
Keywords: biomorphous SiC, Si infiltration, SEM, AFM, EPR, Raman scattering.
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