Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 072-076.


Bi2Te3-хSex <Ag> (х = 0.04) nanocrystal formation
F.K. Aleskerov1, S.K. Kahramanov1, М.М. Asadov2,*, K.S. Kahramanov1

1Production Association, Azerbaijan National Academy of Sciences
2Institute of Chemical Problems, Azerbaijan National Academy of Sciences AZ 1143 Baku, G. Javid av., 29
*E-mail: mirasadov@yandex.ru; mirasadov@gmail.com

Abstract. The results of experimental researches dealing with formation of nanometric- size doped (Ag) layers on the surface (0001) between Te (1) –Te (1) telluride quintet layers in Bi 2 Te 3-х Se x 〈Ag〉 (х = 0.04) crystals under directed crystallization has been submitted. During the crystal growth as result of impurity diffusion along a surface (0001), accumulation, redistribution and nanocrystal formation between Te (1) –Te (1) layers occur. By the method of atomic-force microscopy, the Bi 2 Te 3-х Se x 〈Ag〉 crystal images with nanolayers were obtained. Being based on experimental data, the fractal dimension of nanocrystalline layers was estimated.

Keywords: nanomaterial, low-dimensional structure, atomic-force microscopy.

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