Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 1. P. 098-104.


Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy V.N. Torbin, V.V. Omelchuk, T.M. Nazarova*, L. Rebohle**, W. Skorupa**

V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, 45, prospekt Nauki,03028 Kiev, Ukraine
*National Technical University “KPI”,37, prospekt Peremogy,03056 Kyiv, Ukraine
**Institute of Ion Beam Physics and Materials Research, Forschungzentrum Rossendorf e.V., POB 510119, D-01314, Dresden, Germany

Abstract. In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO 2 layers co-implanted with Si + and C + ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO 2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO 2 structures.

Keywords: electroluminescence, MOS – structure, implantation, EL quenching.

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