Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 001-007.


X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich 1

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
1 CJSC “Svetlana-Optoelectronics”, St.-Petersburg, POB 78, 194156 Russia

Abstract. High resolution X-ray diffractometry (HRXRD) was used to investigate In x Ga 1−x N/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of In x Ga 1−x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of Parrat- Speriozu was adapted for hexagonal syngony structures.

Keywords: high resolution X-ray diffractometry, multilayered structure, deformation characteristics.

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