References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 1-7 (2010).
DOI: https://doi.org/10.15407/spqeo13.01.001

References

1. T. Witaker, Technology and application of light emitting diodes // LEDs Magazine 13, p. 20 (2007).

2. F.A. Ponce and D.P. Bour, Spontaneous polarization and piezoelectric constants of III-V nitrides // Nature (London) 386, p. 351(1997). https://doi.org/10.1038/386351a0

3. S. Nakamura and G. Fasol, The Blue Laser Diode. Springer, Berlin, 1997. https://doi.org/10.1007/978-3-662-03462-0

4. Zhenyang Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R.T. Lechner, T. Roch, and G. Bauer, Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by X-ray reflectivity and diffraction // Appl. Phys. Lett. 80 (19), p. 3521 (2002). https://doi.org/10.1063/1.1479206

5. L. Kirste, K.M. Pavlov, S.T. Mudie, V.I. Punegov and N. Herres, Analysis of the mosaic structure of an ordered (Al, Ga) N layer // J. Appl. Cryst. 38, p. 183-192 (2005). https://doi.org/10.1107/S0021889804030675

6. W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L.B. Rowland, and D.K. Gaskil, Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy // Appl. Phys. Lett. 66, p. 1252-1254 (1995). https://doi.org/10.1063/1.113253

7. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck, Role of threading dislocation structure in the X-ray diffraction peak widths in epitaxial GaN films //Appl. Phys. Lett. 68, p. 643 (1996). https://doi.org/10.1063/1.116495

8. T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, and H.P. Strunk, Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis Xray diffractometry // Phil. Mag. A 77, p. 1013 (1998). https://doi.org/10.1080/01418619808221225

9. R.N. Kutt, V.V. Ratnikov, G.N. Mosina, M.P. Scheglov, Structural perfection of epitaxial GaN layers in accord to X-ray diffraction data // Fizika tverdogo tela 41, p. 30-36 (1999), in Russian. https://doi.org/10.1134/1.1130722

10. H.-M. Wang, J.-P. Zhang, C.-Q. Chen, Q. Fareed, J.W. Yang, and M. Asif Khan, AlN/AlGaN superlattices as dislocation filter for low-threadingdislocation thick AlGaN layers on sapphire //Appl. Phys. Lett. 81, p. 604-606 (2002). https://doi.org/10.1063/1.1494858

11. V.P. Klad'ko, S.V. Chornen'kii, A.V. Naumov, A.V. Komarov, M. Tacano, Yu.N. Sveshnikov, S.A. Vitusevich, and A.E. Belyaev, Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire // Semiconductors 40, p. 1060 (2006). https://doi.org/10.1134/S1063782606090132

12. M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada and S. Nakamura, Brillouin scattering study of bulk GaN //J. Appl. Phys. 85, p. 8502 (1999). https://doi.org/10.1063/1.370635

13. W. Paszkowicz, X-ray powder diffraction data for indium nitride // Powder Diffract. 14, p. 258 (1999). https://doi.org/10.1017/S0885715600010630

14. K.P. O'Donnell, R.W. Martin, and P.G. Middleton, Origin of luminescence from InGaN diodes // Phys. Rev. Lett. 82, p. 237 (1999). https://doi.org/10.1103/PhysRevLett.82.237

15. V.S. Speriosu, T. Vreeland, Jr., X-ray rocking curves analysis of superlattices // J. Appl. Phys. 56, p. 1591 (1984). https://doi.org/10.1063/1.334169

16. V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, A.E. Belyaev, and V.F. Machulin, Influence of dislocation structure on deformation processes in AlGaN/GaN/(0001)Al2O3 heterostructures // Ukrainian Journal of Physics 54 (10), p. 1014-1020 (2009).

17. R. Kutt, M. Scheglov, V. Davydov, and A. Usikov, Deformation of layers in superlattice AlGaN/GaN as follows from the X-ray diffraction analysis // Fizika tverdogo tela 46 (2), p. 353 (2004). https://doi.org/10.1134/1.1649438

18. V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, H. Hardtdegen, and S.A. Vitusevich, Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN structures // Appl. Phys. Lett. 95, 031907(3) (2009). https://doi.org/10.1063/1.3184569

19. V.P. Kladko, A.F. Kolomys, M.V. Slobodian, V.V. Strelchuk, V.G. Raycheva, A.E. Belyaev, S.S. Bukalov, H. Hardtdegen, V.A. Sydoruk, N. Klein, and S.A. Vitusevich, Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate // J. Appl. Phys. 105, 063515(9) (2009). https://doi.org/10.1063/1.3094022

20. V. Ratnikov, R. Kyutt, T. Shubina, T. Pashkova, E. Valcheva, and B. Monemar // J. Appl. Phys. 88, p. 6252-6258 (2000). https://doi.org/10.1063/1.1321021

21. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J.W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Strainrelated phenomena in GaN thin films // Phys. Rev. B 54, p. 17745 (1996) https://doi.org/10.1103/PhysRevB.54.17745