Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 012-018.

Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik*, I.M. Khacevich*, O.V. Tretyak, A.G. Shkavro

Taras Shevchenko Kyiv National University, Faculty of Radiophysics 64, Volodymyrska str., 01601 Kyiv, Ukraine
*V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail:

Abstract. The theoretical and experimental investigations of electrical properties of the SiO 2 /Si-ncs/SiO 2 /Si structures grown by high temperature annealing SiO X , X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C-V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C-V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO 2 /Si-ncs/SiO 2 /Si structures with the tunnel dielectric layer revealed the effect of memorizing.

Keywords: nanocluster, static conductance, dynamic conductance, negative differential capacitance, memorizing effect.

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