References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 12-18 (2010).
DOI: https://doi.org/10.15407/spqeo13.01.012

References

1. V.N. Bogomolov, V.G. Golubev, N.A. Feoktistov, A production of regular three-dimensional lattices of silicic clusters of submicron sizes in SiO2 matrix // Zhurnal Tekhnicheskoy Fiziki 24 (8), p. 90-95 (1998), in Russian. https://doi.org/10.1134/1.1262099

2. I. Crupi, D. Corso, G. Ammendola, S. Lombardo, C. Geradi, B. DeSalvo, G. Ghibaudo, E. Rimini, and M. Melanotte, Peculiar aspects of nanocrystal memory cells: Data and extrapolations // IEEE Trans. Nanotechnology 2 (4), p. 319-323 (2003). https://doi.org/10.1109/TNANO.2003.820515

3. G.A. Kachurin, V.A. Volodin, D.I. Tetelbaum, D.V. Marin, A.F. Leier, A.K. Gutakovsky, A.G. Cherkov, A.N. Mikhailov, Formation of silicon nanocrystals in SiO2 layers by implantation of Si ions with intermediate annealing // Fizika Tekhnika Poluprovodnikov 39 (5), p. 582-586 (2005), in Russian. https://doi.org/10.1134/1.1923564

4. C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassing, G. Ben Assayag, A. Claverie, T. Müller, K.H. Heinig, M. Parego, M. Fanciulli, P. Dimitrakis, P. Normand, Manipulation of twodimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation // J. Appl. Phys. 95 (10), p. 5696-5702 (2004). https://doi.org/10.1063/1.1695594

5. P.T. Huy, V.V. Thu, N.D. Chien, C.A.J. Ammerlaan and J. Weber, Structural and optical properties of Si-nanoclusters embedded in silicon dioxide // Physica B: Condensed Matter. 376-377, p. 868-871 (2006). https://doi.org/10.1016/j.physb.2005.12.217

6. S. Oda, Charge storage in silicon nanocrystals and device application // Mater. Sci. Eng. B 101, p. 19- 24 (2003).

7. J.A. Berashevich, B.V. Kamenev, V.E. Borisenko, Luminescence of nc-Si/dielectric multilayer structures under injection excitation // Fizika Tekhnika Poluprovodnikov 36 (2), p. 221-226 (2002), in Russian. https://doi.org/10.1134/1.1453441

8. O.B. Gusev, M. Voydak, M. Klik, M. Forkales, T. Gregorkevich, Excitation of erbium in the SiO2:Si-nc matrix at the impulsive pumping // Fizika Tverdogo Tela 47 (1), p. 105-107 (2005), in Russian. https://doi.org/10.1134/1.1853457

9. V.A. Dan'ko, I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, Kinetics of structural-phase transformations in thin SiOx films in the course of rapid thermal annealing // Fizika Tekhnika Poluprovodnikov 39 (10), p. 1239-1245 (2005), in Russian. https://doi.org/10.1134/1.2085270

10. D.V. Nefedov, R.K. Yafarov, Influence of temperature on formation of silicic nanocrystallites on noncrystalline substrates in plasma of microwave gas discharge // Zhurnal Tekhnicheskoy Fiziki 34 (2), p. 62-68 (2007), in Russian.

11. V.Ya. Aleshkin, N.A. Bekin, M.N. Buyanova, B.N. Zvonkov, A.V. Murel, Investigation of the electron density of states in quantum wells and quantum dot arrays by C V method // Fizika Tekhnika Poluprovodnikov 33 (10), p. 1246-1252 (1999), in Russian. https://doi.org/10.1134/1.1187882

12. A.J. Chiquito, Yu.A. Pusep, S. Mergulhao, and J.C. Galzerani, Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs selfassembled quantum dots // Phys. Rev. 61, p. 5499-5504 (2000). https://doi.org/10.1103/PhysRevB.61.5499

13. V.V. Ilchenko, A.A. Buyanin, K.Y. Panarin, S.D. Lin, N.V. Shkil, Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature // Appl. Phys. Lett. 90, 263114 (1-3) (2007). https://doi.org/10.1063/1.2752737

14. S.D. Lin, V.V. Ilchenko, V.V. Marin, O.O. Buyanin, K.Y. Panarin, O.V. Tretyak, Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots // Appl. Phys. Lett. 93, 103103(1-3) (2008). https://doi.org/10.1063/1.2975169

15. V.V. Ilchenko, K.Y. Panarin, A.A. Buyanin, V.V. Marin, N.V. Shkil, O.V. Tretyak, Modelling of the frequency dependence of capacitancevoltage characteristics of metal-semiconductor contact with quantum dot layer // Zhurnal fizychnykh doslidzhen' 12 (1), 1801(1-7) (2008), in Ukrainian.

16. G.Y. Hu, R.F. O'Connel, Y.L. He, M.B. Yu, Electronic conductivity of hydrogenated silicon films // J. Appl. Phys. 78 (6), p. 3945-3948 (1995). https://doi.org/10.1063/1.359914

17. A.S. Gudovskikh, J.-P. Kleider, E.I. Terukov, Characterization of a-Si:H/c-Si interface by admittance spectroscopy // Fizika Tekhnika Poluprovodnikov 39 (8), p. 940-944 (2005), in Russian. https://doi.org/10.1134/1.2010683

18. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials, 22-nd ed., vol. l. Clarendon, Oxford, 1979.

19. V.V. Ilchenko, V.V. Marin, I.M. Khacevich, Investigation of capacitance-voltage characteristics of MIS-structure with Si-nanoclusters // Proc. 3-rd Intern. Sci. and Techn. Conf. "Sensors Electronics and Microsystems Technology" "SEMST-3", Ukraine, Odessa, June 2-7, 2008, p. 124.