Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 024-029.

Silicon carbide defects and luminescence centers in current heated 6H-SiC
S.W. Lee1, S.I. Vlaskina2,3, V.I. Vlaskin4, I.V. Zaharchenko4, V.A. Gubanov4, G.N. Mishinova4, G.S. Svechnikov3, V.E. Rodionov3, and S.A. Podlasov5

1Department of Physics, Dongguk University, Pildong 3-26, Chung-ku, Seoul 100-715, Korea
2Dong Seoul College, 461-714, 423, Bokjung-Dong, Sungnam-city, Kyonggi-do, Korea Tel.: 82 (031) 7202141; fax: 82(031)202261; e-mail: 3V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
4Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka str., 01033 Kyiv, Ukraine
5National Technical University of Ukraine “Kyiv Polytechnic Institute”, 37, prospect Peremogy, 03056 Kyiv, Ukraine

Abstract. At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix.

Keywords: luminescence center, silicon carbide, stacking faults, donor acceptor pair.

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