References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 24-29 (2010).
DOI: https://doi.org/10.15407/spqeo13.01.024

References

1. S. Soloviev and D. Cherednichenko, Y. Gao, A. Grekov et al., Forward voltage drop degradation in diffused SiC p-i-n diodes // J. Appl. Phys. 95(8) (2004). https://doi.org/10.1063/1.1687035

2. P.G. Baranov, E.N. Mokhov // Inst. Phys. Conf. Ser. 142, p. 293 (1996).

3. W. Suttrop, G. Pensl, and P. Lanig // Appl. Phys. A 51, p. 231 (1990). https://doi.org/10.1007/BF00324007

4. M. Soueidan, G. Ferro, B. Nsouli et al., Boron doping vapor-liquid-solid growth of homoepitaxial 4H-SiC layers // Material Science Forum 556-557, p. 65-68 (2007). https://doi.org/10.4028/www.scientific.net/MSF.556-557.65

5. R.P. Devaty and W.J. Choyke // Phys. status solidi (a) 162, p. 5 (1997). https://doi.org/10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.3.CO;2-A

6. M. Ikeda, H. Matsunami, and T. Tanaka // Phys. Rev. B 22, p. 2842 (1980). https://doi.org/10.1103/PhysRevB.22.2842

7. M.M. Anikin, A.A. Lebedev, A.L. Syrkin, and A.V. Suvorov // Sov. Phys. Semicond. 19, p. 69 (1985).

8. M.S. Mazzola, S.E. Saddow, P. Neudeck, V.K. Lakdawala, and S. We // Appl. Phys. Lett. 64, p. 2730 (1994). https://doi.org/10.1063/1.111457

9. M.S. Mazzola, S.E. Saddow, and C.W. Tipton // Inst. Phys. Conf. Ser. 142, p. 473 (1996).

10. H. Kuwabara and S. Yamada // Phys. status solidi (a) 30, p. 739 (1975). https://doi.org/10.1002/pssa.2210300234

11. T. Daliver, G. Pensl, H. Matsumami, T. Kimoto, W.J. Choyke, A. Schöner, and N. Nordell // Phys. status solidi (a) 162, p. 199 (1997). https://doi.org/10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

12. W.J. Choyke and Lyle Patrick // Phys. Rev. 127, p. 1868 (1962). https://doi.org/10.1103/PhysRev.127.1868

13. V.I. Sankin, G.B. Dubrovskii // Sov. Phys. Solid State 17, p. 1193 (1975). https://doi.org/10.1016/0038-1098(75)90284-7

14. L. Patrick // Phys. Rev. 180, p. 794 (1969). 15. P.G. Baranov, I.V. Ilyin and E.N. Mokhov // Solid State Communs. 100, p. 371 (1996). https://doi.org/10.1016/0038-1098(96)00425-5

16. E.N. Kalabukhova, S.N. Lukin, E.N. Mokhov, J. Reinke, S. Greulich-Weber and J.-M. Spaeth // Inst. Phys. Conf. Ser. 142, p. 333 (1996).

17. A. Fukumoto // Phys. status solidi (b) 202, p. 125 (1997). https://doi.org/10.1002/1521-3951(199707)202:1<125::AID-PSSB125>3.0.CO;2-9

18. S.I. Vlaskina, D.H. Shin, 6H to 3C polytype transformation in silicon carbide // Jpn. J. Appl. Phys. Part 2, 38, No.1A/B, p. L27-29 (1999). https://doi.org/10.1143/JJAP.38.L27

19. G. Zanmarchi, Luminescence of the aluminium centre in cubic SiC // J. Phys. Chem. Solids 29, No.10, p. 1727-1736 (1968). https://doi.org/10.1016/0022-3697(68)90156-X

20. J.A. Freitas, S.G. Bishop, P.E. Nordguist, M.L. Gipe, Donor bonding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminium doped beta SiC films // Appl. Phys. Lett. 52, No. 20, p. 1695-1697 (1988). https://doi.org/10.1063/1.99021

21. J.A. Freitas, Jr., Photoluminescence spectra of SiC polytypes, In: Properties of Silicon Carbide, Ed. G.L. Harris // EMIS Datareviews Series No. 13, p. 29-41(1995).

22. A.A. Lebedev, V.V. Zelenin, P.L. Abramov et al., Growth and study of thick 3C-SiC epitaxial layers produced by epitaxy on 6Y-SiC substrates // Material Science Forum 556-557, p. 175-178 (2007). https://doi.org/10.4028/www.scientific.net/MSF.556-557.175

23. O.J. Glembocki, M. Skowronski, S.M. Prokes, D.K. Gaskill and J.D. Caldwell, Observation of free carrier redistribution resulting from stacking fault formation in annealed 4H-SiC // Material Science Forum 527-529, p. 347-350 (2006). https://doi.org/10.4028/www.scientific.net/MSF.527-529.347