References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 36-42 (2010).
DOI: https://doi.org/10.15407/spqeo13.01.036

References

1. T. Endo, T. Nishimura, K. Nakakuki, M. Kitamura, K. Sugijama, DLTS study for energy-broadening of the defect level on introducing radiation damage in GaP // Jpn. J. Appl. Phys. 27(11), p. 2107-2112 (1988). https://doi.org/10.1143/JJAP.27.2107

2. T. Endo, E. Uchida, Y. Hirosaki, K. Sugijama, Deep levels in non-doped and donor-doped GaP // Jpn. J. Appl. Phys. 27(1), p. 153-154 (1988). https://doi.org/10.1143/JJAP.27.153

3. T. Endo, Y. Hirosaki, E. Uchida, H. Miyake, K. Sugijama, Deep levels in electron-irradiated GaP at 10 MeV // Jpn. J. Appl. Phys. 28(10), p. 1864-1870 (1989). https://doi.org/10.1143/JJAP.28.1864

4. M.A. Zaidi, M. Zazoui, J.C. Bourgoin, Defects in electron irradiated n-type GaP // J. Appl. Phys. 74(8), p. 4948-4952 (1993). https://doi.org/10.1063/1.354332

5. K. Kuriuama, Y. Miyamoto, Redshift of the longitudinal optical phonon in neutron irradiated GaP // J. Appl. Phys. 85(7), p. 3499-3502 (1999). https://doi.org/10.1063/1.369708

6. A.V. Gommonai, D.B. Goyer, O.O. Goushchaa, Yu.M. Azhniuk, I.G. Megela, M. Kranjcec, Radiative recombination in electron-irradiated GaP crystals // J. Optoelectron. and Adv. Mater. 5(3), p. 641-646 (2003).

7. M. Zafar Iqbal, N. Baber, M. Arhad, N. Zafar, Sensitive thermometry using capacitance variation of GaP LEDs // Solid-State Electronics 30(6), p. 639-641 (1987). https://doi.org/10.1016/0038-1101(87)90223-1

8. I. Prochazka, K. Hamal, B. Sopko, J. Blazey, D. Chren, Photon counting detector with picosecond timing for X to visible range on the basis of GaP // Nucl. Inst. and Meth. Phys. Res. A 568, p. 437-439 (2006). https://doi.org/10.1016/j.nima.2006.07.026

9. M.M. Sobolev, V.G. Nikitin, High-temperature diode formed by epitaxial GaP layers // Tech. Phys. Lett. 24(5), p. 329-331 (1998). https://doi.org/10.1134/1.1262110

10. A. Berg, P. Din, Light Emitting Diodes. Mir, Moscow, 1979 (in Russian).

11. K. Zdansky, J. Zavadil, D. Nohavika, S. Kugler, Degradation of commercial high-brightness GaP:N green light emitting diodes // J. Appl. Phys. 82(12), p. 7678-7684 (1998). https://doi.org/10.1063/1.367889

12. M.I. Natham, G. Burns // J. Phys. Rev. 12(9), p. 125 (1963). https://doi.org/10.1103/PhysRev.129.125

13. F. Williams // Phys. status solidi 25, p. 493 (1968). https://doi.org/10.1002/pssb.19680250202

14. D.I. Dean, Izoelectronic traps in semiconductors (experimental) // J. Lumin.7, p. 51 (1973). https://doi.org/10.1016/0022-2313(73)90059-8

15. V.M. Andreev, L.M. Dolginov, D.N. Tretyakov, Liquid Epitaxy in Technology of Semiconductor Devices. Sovetskoe radio, Мoscow, 1975 (in Russian).

16. G.A. Sukach, Radiation-induced transformation of radiative exciton complexes bound to nitrogen in GaP:N green light-emitting structures // J. Lumin. 85, p. 121-128 (1999). https://doi.org/10.1016/S0022-2313(99)00058-7

17. D.G. Thomas, M.E. Gershenson, Bound exitons in GaP // Phys. Rev. 131(5), p. 2397-2404 (1964). https://doi.org/10.1103/PhysRev.131.2397

18. M. Gal, Temperature modulated photoluminescence of GaP:N // Phys. Rev. B 18(2), p. 803-808 (1978). https://doi.org/10.1103/PhysRevB.18.803

19. W. Lancerns, A. Wiersma, Optical dephasing and exciton transfer of an impurity bound in semiconductors. Proton-echo experiment on GaP:N // Phys. Rev. B 32(12), p. 8108-8115 (1985). https://doi.org/10.1103/PhysRevB.32.8108

20. G.A. Herrmannsfeldt, Yia-Chung Chang, Highpressure studies of luminescence from GaP and GaP:N diodes // Phys. Rev. B 34(8), pp.5373-5376 (1986). https://doi.org/10.1103/PhysRevB.34.5373

21. V.S. Vavilov, Effect of Radiations on Semiconductors. Mir, Moscow, 1963 (in Russian).

22. Q. Hong, K. Wu, X. Zhang, Study on the luminescence of GaP:N under selective excitation of exciton bound to NN1 centers // J. Lumin. 40&41, p. 487-488 (1988). https://doi.org/10.1016/0022-2313(88)90313-4

23. E.Yu. Brailovskii, N.I. Ostashko, V.P. Tartachnyk, V.I. Shakhovtsov, Influence of point radiation defects on near-edge optical absorption of GaP crystals // Ukrainskii Fizicheskii Zhurnal 26(6), p. 973-977 (1981), in Russian.

24. V.V. Volkov, V.Ja. Opilat, V.P. Tartachnyk, I.I. Tychyna, Deep levels in the initial and exposed to electrons beams gallium phosphide // Vysokochistye veschestva 2, p. 60-63 (1989), in Russian.