Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 58-60 (2010).
DOI:
https://doi.org/10.15407/spqeo13.01.058
References
1. U. Hommerich, A.G. Bluiett, I.K. Jones et al., Crystal growth and infrared spectroscopy of Cr : Cd1-xZnxTe and Cr : Cd1-xMgxTe // J. Cryst. Growth 287, p. 243 (2006). https://doi.org/10.1016/j.jcrysgro.2005.11.015 | | 2. M. Mond, D. Albrecht, E. Heumann et al., 9.1 m and 0.2 - m laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe // Opt. Lett. 27, p. 1034 (2002). https://doi.org/10.1364/OL.27.001034 | | 3. Yu.A. Zagoruiko, N.O. Kovalenko, O.A. Fedorenko, V.A. Khristyan, ZnMgSe:Cr2+ single crystal: a novel material for active elements of tunable IR region lasers (rapid communication) // Functional Materials 15, p. 247 (2008). | | 4. M. Godlewski, M. Surma, V.Yu. Ivanov, T.P. Surkova, Mechanizms of radiative and nonradiative recombination in ZnSe:Cr and ZnSe:Fe // Fizika nizkikh temperatur 30, p. 1187 (2004), in Russian. https://doi.org/10.1063/1.1820019 | | 5. Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko, M.A. Rom, P.V. Mateichenko, Physical properties of ZnSe-MgSe, ZnSe-CdS solid solution and possibilities of their application in IR engineering // Semiconductor Physics, Quantum Electronics & Optoelectronics 3(2), р. 165-169 (2000). | |
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