Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 079-083.


Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
V.P. Veleschuk1, O.V. Lyashenko2, Z.K. Vlasenko1, M.P. Kysselyuk1

1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2 Taras Shevchenko Kyiv National University, 2, Academician Glushkov Ave., 03022 Kyiv, Ukraine E-mail: lyashenk@univ.kiev.ua

Abstract. It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters.

Keywords: acoustic emission, light-emitting diodes, electroluminescence.

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