Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (1) P. 79-83 (2010).
DOI:
https://doi.org/10.15407/spqeo13.01.079
References
1. O.V. Lyashenko, V.P. Veleshchuk, O.I. Vlasenko, R.G. Chuprina, Dynamics and Time Correlation of Acoustic Emission, Electrical Noises and Quantum Yield Fluctuations in Optoelectronic Devices // AIP Conference Proc. 922, p. 216-222 (2007). https://doi.org/10.1063/1.2759670 | | 2. А.I. Vlasenko, O.V. Lyashenko, P.F. Oleksenko, and V.P. Veleschuk, Fluctuations of current, electroluminescence and acoustic emission in lightemitting А3 В5 heterostructures // Semiconductor Physics, Quantum Electronics & Optoelectronics 11(3), р. 230-235 (2008). https://doi.org/10.15407/spqeo11.03.230 | | 3. X. Guo and E.F. Schubert, Current crowding in GaN/InGaN light emitting diodes on insulating substrates // J. Appl. Phys. 90(8), p. 4191-4195 (2001). https://doi.org/10.1063/1.1403665 | | 4. N.I. Bochkareva, A.A. Efremov, Yu.T. Rebane, R.I. Gorbunov, A.V. Klochkov, and Yu.G. Shreter, Nonuniformity of carrier injection and degradation of blue LEDs // Fizika i tekhnika poluprovodnikov 40(1), p. 118-123 (2006), in Russian. https://doi.org/10.1134/S1063782606010210 | | 5. A.V. Zinovchuk, Effect of current crowding on the behavior of electron-hole plasma in multilayer light emitting structures // Thesis for the Degree of Candidate of Phys.-Math. Sci., spec. 01.04.07, Kyiv, p. 20 (2008). | | 6. B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, and M.-A. Poisson, Origin of power fluctuations in GaN resonant-cavity light-emitting diodes // The international electronic journal of optics "Optics Express" 12(5), p. 736-741 (2004). https://doi.org/10.1364/OPEX.12.000736 | | 7. V.P. Veleshchuk and O.V. Lyashenko, Acoustic emission of light-emitting structures on the A3 B5 - base determined by direct current // Ukrainsky Fizychny Zhurnal 48(9), p. 981-985 (2003), in Ukrainian. | | 8. V.P. Veleschuk, O.I. Vlasenko, O.V. Lyashenko, Yu.O. Myagchenko et al., Acoustic emission on the relaxation of local thermomechanical stresses in the process of degradation of light-emitting heterostructures on the basis of InGaN and GaAsP // Ukrainian Journal of Physics 53(3), p. 240-246 (2008). | | 9. V.P. Veleshchuk, O.V. Lyashenko, Yu.A. Myagchenko, and R.G. Chuprina, Evolution of electroluminescence spectra and the acoustic emission of epitaxial structures GaAsP // J. Appl. Spectroscopy 71(4), p. 553-557 (2004). https://doi.org/10.1023/B:JAPS.0000046297.98718.aa | | 10. V.P. Veleschuk, O.I. Vlasenko, O.V. Lyashenko, A. Baidullaeva, B.K. Dauletmuratov, Acoustic emission and changes of luminescent and electrical characteristics of InGaN/GaN heterostructures at the current loading // Physics and Chemistry of Solid State 9(1), p. 169-174 (2008). | | 11. A.A. Efremov, N.I. Bochkareva, R.I. Gorbunov, D.A. Lavrinovich, Y.T. Rebane, D.V. Tarkhin, and Y.G. Shreter, Influence of Joule heating on quantum efficiency and heat regime options of high power blue InGaN/GaN light-emitting diodes // Fizika i tekhnika poluprovodnikov 40(5), p. 621- 627 (2006). https://doi.org/10.1134/S1063782606050162 | | 12. А.A. Bergh and P.J. Dean, Light Emitting Diodes. Mir, Moscow, 1979 (in Russian). | | 13. V.A. Greshnikov and Yu.B. Drobot, Acoustic Emission. Izd-vo Standartov, Moscow, 1976 (in Russian). | |
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