Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 001-006.

Electrophysical properties of meso-porous silicon free standing films modified with palladium
A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov

Institute of High Technologies Taras Shevchenko Kyiv National University, 64, Volodymyrska str., 01601 Kyiv, Ukraine, E-mail:

Abstract. Resistivity and complex impedance voltage dependences for thick meso- porous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of palladium particles into the porous matrix is observed. Impedance change regularities during oxidation of the samples have been measured. The explanation of experimental results by asymmetrical distribution of charge carrier traps in the bulk of porous silicon has been suggested. Energy band diagrams and charge transfer mechanisms of these heterostructures are discussed.

Keywords: high-k dielectric, dielectric-semiconductor interface.

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