|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 001-006.
Electrophysical properties of meso-porous silicon free
standing films modified with palladium
Institute of High Technologies
Taras Shevchenko Kyiv National University,
64, Volodymyrska str., 01601 Kyiv, Ukraine,
E-mail: an.manilov@yandex.ru
Abstract. Resistivity and complex impedance voltage dependences for thick meso-
porous silicon free layers were studied in this work. The asymmetrical by the sign of
applied voltage experimental curves at low frequencies have been obtained. Modification
of electrophysical properties due to introduction of palladium particles into the porous
matrix is observed. Impedance change regularities during oxidation of the samples have
been measured. The explanation of experimental results by asymmetrical distribution of
charge carrier traps in the bulk of porous silicon has been suggested. Energy band
diagrams and charge transfer mechanisms of these heterostructures are discussed.
Keywords: high-k dielectric, dielectric-semiconductor interface.
| ||