2.
O. Bisi, S. Ossicini, L. Pavesi, Porous silicon: a quantum sponge
structure for silicon based optoelectronics . Surf. Sci. Repts., 38, p.
1-126 (2000). https://doi.org/10.1016/S0167-5729(99)00012-6
3.
A.M. Orlov, A.A. Skvortsov, A.G. Klementyev, A.V. Sindyaev, Adsorptive
modifications on porous silicon surface during natural and high
temperature aging. Pis'ma zhurnal tekhnich. fiziki, 27(2), p. 76-83
(2001), in Russian.
4. S.P. Zimin, A.N. Bragin,
Conductivity relaxation in coated porous silicon after annealing .
Semiconductors 33 (4), p. 457-460 (1999). https://doi.org/10.1134/1.1187710
5.
D.I. Bilenko, O.Ya. Belobrovaya, E.A. Jarkova, I.B. Mysenko, E.I.
Khasina, The influence of the adsorption on the electrophysical
properties of the structures on the base of oxidized porous silicon.
Fizika tekhnika poluprovodnikov, 36(4), p. 490-495 (2002), in Russian.
6.
V.A. Skryshevsky, V. Polischuk, A.I. Manilov, I.V. Gavrilchenko, R.V.
Skryshevsky, Improved hydrogen detection of island type palladium film
– nanoporous silicon diode at room temperature . Sensor Electronics and
Microsystem Technologies, 2, p. 21-27 (2008).
7. T.I.
Gorbanyuk, A.A. Evtukh, V.G. Litovchenko, V.S. Solntsev, E.M. Pakhlov,
Adsorption of hydrogen containing molecules in multilayer structures
with films of porous silicon and palladium. Physics and Chemistry of
Solid State 7 (1), p. 60-66 (2006).
8. S. Bravina, N.
Morozovsky, R. Boukroub, Dynamic electrophysical characterization of
porous silicon humidity sensing. Semiconductor Physics, Quantum
Electronics & Optoelectronics, 9 (1), p. 79-83 (2006).
9.
V. Lysenko, F. Bidault, S. Alekseev, V. Zaitsev, D. Barbier, Ch.
Turpin, F. Geobaldo, P. Rivolo, E. Garrone, Study of porous silicon
nanostructures as hydrogen reservoirs . J. Phys. Chem. B, 109, p.
19711-19718 (2005). https://doi.org/10.1021/jp053007h
10.
A.I. Manilov, S.V. Litvinenko, S.A. Alekseev, G.V. Kuznetsov, V.A.
Skryshevsky, Use of powders and composites based on porous and
crystalline silicon in the hydrogen power industry. Ukrainian Journal
of Physics, 55 (8), p. 929-936 (2010). 11. K. Luongo, A. Sine, S.
Bhansali, Development of a highly sensitive porous Si-based hydrogen
sensor using Pd nanostructures. Sensors and Actuators B, 111–112, p.
125-129 (2005).
12. V.G. Litovchenko, T.I. Gorbanyuk, O.O.
Yefremov, A.A. Yevtukh, Yu.G. Ptushinskyy, V.A. Ischuk, O.V. Kanash,
Catalytic peculiarities of ultra-thin palladium films and its alloys.
Ukrainian Journal of Physics 48 (6), p. 565-575 (2003).
13.
A.I. Manilov, S.A. Alekseev, V.A. Skryshevsky, S.V. Litvinenko, G.V.
Kuznetsov, V. Lysenko, Influence of palladium particles impregnation on
hydrogen behavior in meso-porous silicon . J. Alloys and Compounds 492,
p. 466-472 (2010). https://doi.org/10.1016/j.jallcom.2009.11.141
14.
S.P. Zimin, Classification of porous silicon electrical properties .
Fizika tekhnika polupro- vodnikov, 34(3), p. 359-363 (2000), in Russian.
15.
I. Bazrafkan, R.S. Dariani, Electrical behavior of free-standing porous
silicon layers . Physica B: Condensed Matter, 404 (12-13), p. 1638-1642
(2009). https://doi.org/10.1016/j.physb.2009.01.040
16.
A.Yu. Karlash, A.I. Manilov, I.I. Ivanov, V.A. Skryshevsky,
Diffusion-adsorption dynamics in multilayer silicon quantum-dimension
structures. Abstracts of III Ukrainian Conference on Semiconductor
Physics, Odessa, 2007, p. 244.
17. V.A. Skryshevsky, Physical Basics of Semiconductor Chemical Sensors. Kyiv, Kyiv University Press, 2006.
18.
I.A. Karpovich, S.V. Tikhov, E.L. Shobolov, I.A. Andryuschenko, Defect
formation in GaAs and Si at Pd deposition on the surface. Fizika
tekhnika poluprovodnikov, 40 (3), p. 319-323 (2006), in Russian.