Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 127-129.
DOI: https://doi.org/10.15407/spqeo14.01.127

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. The effect of low-temperature annealing on light emitting properties of na- Si/SiO x porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of meta- stable defects in such structures is shown. A temperature interval for healing the meta- stable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.

Keywords: nanoinclusions, silicon oxide, photoluminescence, thin film.

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