Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 127-129.
https://doi.org/10.15407/spqeo14.01.127



References 

1. P. Pellegrino, B. Garrido, C. Garcia et al., Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivation. Physica E, 16, p. 424-428 (2003).
https://doi.org/10.1016/S1386-9477(02)00621-5
 
2. I. Khatsevich, V. Melnik, V. Popov et al., Effect of low-temperature treatments on photoluminescence enhancement of ion beam synthesized Si nanocrystals in SiO 2 matrix . Semiconductor Physics, Quantum Electronics & Optoelectronics, 11, p. 352-355 (2008).
 
3. I.Z. Indutnyi, K.V. Michailovska, V.I. Min'ko, P.E. Shepeliavyi, Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiO x nanostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, 12, p. 105-109 (2009).
 
4. V.A. Dan'ko, S.O. Zlobin, I.Z. Indutnyy et al., Influence of the HF vapor treatment on the structure and luminescence properties of porous Si/SiO x nanocomposites . Ukr. J. Phys., 55(9), p. 1042-1048 (2010).
 
5. V. Danchenko, U.D. Desai, S.S. Brashears, Characteristics of thermal annealing of radiation damage in MOSFET's . J. Appl. Phys., 39, p. 2417-2424 (1968).
https://doi.org/10.1063/1.1656570
 
6. I.P. Lisovskyy, M.V. Voitovych, V.G. Litovchenko et al., Study of radiation defect annealing in nc-Si/SiO 2 film structures . Ukr. J. Phys., 54(10), p. 1038-1043 (2009).