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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 008-012.
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine
Phone/fax: +38 (044)525-62-90; e-mail: sarikov@isp.kiev.ua; victor_naseka@meta.ua
Abstract. In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.
Keywords: gettering, multicrystalline Si, diffusion problem, combined getter.
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