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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 15 N 1
DOI: https://doi.org/10.15407/spqeo15.01

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
Yu.V. Gomeniuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 001-007.
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Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
Sarikov, V. Naseka
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 008-012.
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Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 013-016.
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Phase diagrams of Si1-xGex solid solution: a theoretical approach
A.R. Jivani, A.R. Jani
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 017-020.
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Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
A. Taqi, J. Diouri
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 021-025.
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Influence of -irradiation (60) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 026-031.
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Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 032-034.
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Dielectric properties of TlIn(S1-xSex)2 polycrystals near phase transitions
R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan, V.M. Rubish, O.G. Guranich, A.V. Gomonnai
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 035-037.
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Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 038-040.
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Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu2S
V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 041-043.
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Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry
M. V. Dmitriev, O. Iu. Isaienko, . . Ivanisik, P. A. Korotkov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 044-047.
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Ultrafast light-matter interaction in transparent medium
A.V. Korovin
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 048-054.
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Carbides of A3B5 compounds - new class materials for opto- and microelectronics
V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 055-060.
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Effect of nanosize metal overlayer on C60 thin film optical parameters near fundamental absorption edge
N.L. Dmitruk, O.Yu. Borkovskaya, D.O. Naumenko, T.S. Havrylenko, E. Basiuk, E.M. Shpilevsky
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 061-064.
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Narrow-gap piezoelectric heterostructure as IR detector
F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 065-071.
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A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs
H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 072-076.
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Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K
V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 077-079.
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Interaction between viral particles and structured metal surface under surface plasmon propagation
V. Lozovski, V. Lysenko, M. Spivak, V. Sterligov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 080-082.
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Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband
S.G. Felinskyi, P.A. Korotkov, G.S. Felinskyi
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 083-088.
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Contents (PDF)
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 089.