Determination of interface state density in high-k dielectric-silicon
system from conductance-frequency measurements Yu.V. Gomeniuk Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 001-007. | Full text (PDF)
Characteristics of gettering process in multicrystalline Si wafers with
combined porous Si/Al getters Sarikov, V. Naseka Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 008-012. | Full text (PDF)
Interface features of SiO2/SiC heterostructures according to methods for
producing the SiO2 thin films Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina,
T.M. Ledn'ova, O.B. Okhrimenko Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 013-016. | Full text (PDF)
Phase diagrams of Si1-xGex solid solution: a theoretical approach A.R. Jivani, A.R. Jani Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 017-020. | Full text (PDF)
Binding energy of excitons in parabolic quantum wells in uniform electric
and magnetic fields A. Taqi, J. Diouri Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 021-025. | Full text (PDF)
Influence of -irradiation (60Ñî) on the concentration and mobility of
carriers in Ge and Si single crystals of n-type G.P. Gaidar Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 026-031. | Full text (PDF)
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 032-034. | Full text (PDF)
Dielectric properties of TlIn(S1-xSex)2 polycrystals near phase transitions R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan,
V.M. Rubish, O.G. Guranich, A.V. Gomonnai Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 035-037. | Full text (PDF)
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 038-040. | Full text (PDF)
Influence of internal parameters on the signal value in optical sensor
based on the non-ideal heterostructure CdS-Cu2S V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P.
Balaban, N.P. Zatovskaya Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 041-043. | Full text (PDF)
Experimental and theoretical study of stimulated Raman scattering indicatrix
asymmetry M. V. Dmitriev, O. Iu. Isaienko, À. ². Ivanisik, P. A. Korotkov Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 044-047. | Full text (PDF)
Ultrafast light-matter interaction in transparent medium A.V. Korovin Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 048-054. | Full text (PDF)
Carbides of A3B5 compounds - new class materials for opto- and microelectronics V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 055-060. | Full text (PDF)
Effect of nanosize metal overlayer on C60 thin film optical parameters near fundamental absorption edge N.L. Dmitruk, O.Yu. Borkovskaya, D.O. Naumenko, T.S. Havrylenko, E.
Basiuk, E.M. Shpilevsky Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 061-064. | Full text (PDF)
Narrow-gap piezoelectric heterostructure as IR detector F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 065-071. | Full text (PDF)
A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 072-076. | Full text (PDF)
Contribution of f- and g- transitions to electron intervalley scattering
of n-Si at temperatures 300 to 450 K V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 077-079. | Full text (PDF)
Interaction between viral particles and structured metal surface under
surface plasmon propagation V. Lozovski, V. Lysenko, M. Spivak, V. Sterligov Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 080-082. | Full text (PDF)
Negative dielectric permittivity of nonmagnetic crystals in the terahertz
waveband S.G. Felinskyi, P.A. Korotkov, G.S. Felinskyi Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 083-088. | Full text (PDF)
Contents (PDF) Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 089.
