Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 013-016.
DOI: https://doi.org/10.15407/spqeo15.01.013

Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
Yu.Yu. Bacherikov1, N.S. Boltovets2, R.V. Konakova1, E.Yu. Kolyadina1, T.M. Ledn’ova2, O.B. Okhrimenko1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: (380-44)525-61-82; e-mail: olga@isp.kiev.ua
2State Enterprise Research Institute “Orion”, 8a, Eugene Pottier str., 03057 Kyiv, Ukraine

Abstract. In this work, we studied comparative characteristics of the SiO2/SiC heterostructures. The following two techniques were used for SiO2 formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). According to experimental results obtained from optical absorption and photoluminescence spectra as well as from measurements of internal mechanical stresses, one can conclude that the thin SiO2 films prepared using the technique (ii) possess SiO2/SiC interface with a less number of defective states than that for SiO2 films prepared using the technique (i).

Keywords: SiO2/SiC, thermal oxidation, oxidation in solution, optical absorption, photoluminescence, internal mechanical stresses.

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