Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 017-020.

Phase diagrams of Si1-xGex solid solution: a theoretical approach
A.R. Jivani1 and A.R. Jani2

1V P and R P T P Science College, Vallabh Vidyanagar-388120, Gujarat, India
2Department of Physics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India E-mail:
Phone: (office) +91-2692 – 230011; cell phone +91-9909012156; fax: +91-2692 235207

Abstract. In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si1–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data.

Keywords: solid solution, pseudopotential method, phase diagram.

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