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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 038-040.
References 1. Z.D. Kovalyuk, V.N. Katerinchuk, O.A. Politanska, O.N. Sydor and V.V. Homiak, Influence of -irradiation on properties of InSe photodiodes. Pis'ma zhurnal tekhnich. fiziki, 31(9), p. 1-6 (2005), in Russian.2. V.L. Bakumenko, Z.D. Kovalyuk, L.N. Kurbatov, V.G. Tagaev and V.F. Chishko, Investigation of InSe-GaSe heterojunctions obtained by optical contact. Fizika tekhnika poluprovodnikov, 14 (6), p. 1115-1119 (1980), in Russian. 3. Z.D. Kovalyuk, O.N. Sydor, V.N. Katerynchuk and V.V. Netyaga, Investigation of isotype photosensitive (intrinsic oxide) n-InSe heterostructures prepared by long-term thermal oxidation. Fizika tekhnika poluprovodnikov, 41 (9), p. 1074-1077 (2007), in Russian. 4. Z.D. Kovalyuk, O.I. Kushnir, O.N. Sydor, and V.V. Netyaga, Heterostructures manufactured by annealing of InSe single crystals in sulphur vapours. Tekhnologiya konstruirovaniye elektronnoi apparatury, 79(1), p. 61-62 (2009), in Russian. 5. M. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York and London, 1970. |