Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 038-040.

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
Z.D. Kovalyuk, V.Y. Duplavyy and O.M. Sydor

Chernivtsi Department of the Institute of Materials Science Problems, NAS of Ukraine 5, Iryna Vilde str., 58001 Chernivtsi, Ukraine, Phone: 8 (0372) 52-00-50; e-mail:

Abstract. n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.

Keywords: InS, InSe, heterojunction, current-voltage characteristic, annealing.

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