Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 041-043.

Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu2S
V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya

I.I. Mechnikov Odessa National University, 2, Dvoryanskaya str., 65082 Odessa, Ukraine Phone: +380(48)7266356, Fax: +380(48)7233461, e-mail:

Abstract. The signal (defined by conductivity) of optical sensor based on CdS-Cu2S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity.

Keywords: heterojunction element, tunnel-jumping current transport, signal processing.

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