Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 055-060.

Carbides of A3B5 compounds – new class materials for opto- and microelectronics
V.I. Osinsky1, I.V. Masol2, N.N. Lyahova1, P.V. Deminsky1,3

1Institute of Microdevices, NAS of Ukraine, 3, Severo-syretska str., 04136 Kyiv, Ukraine, E-mail:,,
2“Rostok” firm, 4, prospect Ivana Lepse, 03067 Kyiv, Ukraine E-mail:
3National Technical University of Ukraine “Kyiv Polytechnic Institute”, 37, prospect Peremogy, 03056 Kyiv, Ukraine, E-mail:

Abstract. Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al4C3, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of carbothermic reduction. Analized is the role of precursors in the way of reducing the formation temperature for stable phases of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of carbon atoms. The dependence on preparation conditions for the aluminum single oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal structure on the state of the single oxycarbide crystal structure was determined. The semiconductor AlNOC has been experimentally obtained.

Keywords: А3В5 compounds, epitaxial process, carbide compounds, binary compounds, oxycarbide aluminum, aluminum oxynitrocarbide, aluminum nitride, silicon carbide, TMA.

Full Text (PDF)

Back to N1 Volume 15