Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 1. P. 065-071.
DOI: https://doi.org/10.15407/spqeo15.01.065

Narrow-gap piezoelectric heterostructure as IR detector
F.F. Sizov1, A.B. Smirnov1, R.K. Savkina1, V.A. Deriglazov1, and M.V. Yakushev2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine, Phone: (044) 525-1813; fax: (044) 525-1810, E-mail: alex_tenet@isp.kiev.ua; r_savkina@isp.kiev.ua
2Institute of Semiconductor Physics, SB RAS, 13, Lavrentyeva Av., 630090 Novosibirsk, Russian Federation

Abstract. Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 ·109W-1cm·Hz1/2. The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties.

Keywords: IR detector, strained heterostructure, piezoelectric properties, HgCdTe.

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