Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 1. P. 040-045.
https://doi.org/10.15407/spqeo18.01.040

                                                                 

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
A.G. Golenkov1, K.S. Zhuravlev2, J.V. Gumenjuk-Sichevska1, I.O. Lysiuk1, and F.F. Sizov1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail: golenkov.o@gmail.com; gumenjuk@gmail.com; Lysiuk@gmail.com; sizov@isp.kiev.ua
2A. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, 13, pr. Lavrentieva, Novosibirsk, 630090 Russia; e-mail: zhur@thermo.isp.nsc.ru

Abstract. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10-10 W/Hz1/2 in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt≈6x10-12 W/Hz1/2 , and it is 3-fold lower than that for Si MOSFET (in 0.35 μm technology).

Keywords: sub-THz detectors, heterojunction FET, AlGaN/GaN heterostructure, Si MOSFET, sensitivity.

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