Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)
Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo




Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 18 N 1
DOI: https://doi.org/10.15407/spqeo18.01

Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer
V. V. Korotyeyev
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 001-011.
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Electronic structure of PbSnS3 and PbGeS3 semiconductor compounds with the mixed cation coordination
M.M. Bletskan, D.I. Bletskan, V.M. Kabatsii
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 012-019.
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Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method
G.Yu. Rudko, S.A. Kovalenko, E.G. Gule, V.V. Bobyk, V.M. Solomakha, A.B. Bogoslovskaya
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 020-025.
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Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
T.S. Rozouvan, L.V. Poperenko, I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 026-030.
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Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
N.L. Dmitruk, O.Yu. Borkovskaya, S.V. Mamykin, T.S. Havrylenko, I.B. Mamontova, N.V. Kotova, E.V. Basiuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 031-035.
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Nonlinear - optical processes at streamer discharge in semiconductor
K.I. Rusakov, V.V. Parashchuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 036-039.
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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 040-045.
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Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition
V.V. Strelchuk, O.F. Kolomys, B.O. Golichenko, M.I. Boyko, E.B. Kaganovich, I.M. Krishchenko, S.O. Kravchenko, O.S. Lytvyn, E.G. Manoilov, Iu. M. Nasieka
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 046-052.
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Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 053-056.
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Spectral parameters of electron in multi-shell open semiconductor nanotube
O.M. Makhanets, A.I. Kuchak, V.I. Gutsul, O.M. Voitsekhivska
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 057-062.
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Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films
A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz and V.S. Lysenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 063-070.
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Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
S.M. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 071-073.
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Analysis of conditions for synthesis of CdS:Mn nanoparticles
A.O. Kovalchuk, G.Yu. Rudko, V.I. Fediv, E.G. Gule
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 074-078.
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Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN
G.I. Syngayivska and V.V. Korotyeyev
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 079-085.
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Vibrational states of hexagonal ZnO doped with Co
I.M. Kupchak, N.F. Serpak, V.V. Strelchuk, D.V. Korbutyak
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 086-089.
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On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations
M.V. Shpotyuk, M.M. Vakiv, O.I. Shpotyuk and S.B. Ubizskii
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 090-096.
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Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
S.V. Kondratenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 097-100.
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Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure
Yu.N. Bobrenko, S.Yu. Pavelets, T.V. Semikina, O.A. Stadnyk, G.I. Sheremetova, M.V. Yaroshenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 101-105.
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Morphology and optical constants of nanographite films created by thermal vacuum deposition
V.V. Kozachenko, O.S. Kondratenko, F.Le Normand
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 106-109.
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Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers
G.V.Vertsimakha
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.1. P. 110-114.
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