Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 1. P. 053-056.


Changes in electrophysical properties of heavily doped n-Ge ⟨As⟩ single crystals under the influence of thermoannealings
G.P. Gaidar

Institute for Nuclear Researches, National Academy of Sciences of Ukraine, 47, prospect Nauky, 03680 Kyiv, Ukraine; e-mail:

Abstract. Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ) in heavily doped n-Ge ⟨As⟩ single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤ T ≤ 900 °C), have been investigated and explained.

Keywords: germanium, thermoannealing, Hall effect, charge carrier concentration, charge carrier mobility.

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