Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 1. P. 071-073.


Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
S.M. Red'ko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38 (044) 525-94-64; e-mail:

Abstract. The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350...650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed.

Keywords: photoluminescence, weak magnetic field, gallium nitride.

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