Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 1. P. 090-096.


On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations
M.V. Shpotyuk1,2, M.M. Vakiv1,2, O.I. Shpotyuk1* and S.B. Ubizskii2

1Institute of Materials of SRC "Carat", 202, Stryjska str., 79031 Lviv, Ukraine
2Lviv Polytechnic National University, 12, Bandera str., 79013 Lviv, Ukraine
*The corresponding author e-mail:

Abstract. Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as destruction-polymerization transformations. Two types of experimental measuring protocols can be utilized to study radiation-induced effects within ex-situ direct or in-situ backward measuring chronology, the latter being more adequate for correct separated testing of competitive inputs from both channels of destruction-polymerization transformations. Critical assessment is given on speculations trying to ignore intrinsic radiation-structural transformations in As2S3 glass in view of accompanying oxidation processes. In final, this glass is nominated as the best model object among wide group of vitreous chalcogenide semiconductors revealing the highest sensitivity to radiation-induced metastability.

Keywords: vitreous chalcogenide semiconductors, glasses, optical spectroscopy, X-ray diffraction, γ-irradiation, oxidation.

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