Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 1. P. 034-038.
DOI: https://doi.org/10.15407/spqeo19.01.034


References

1.    G.N. Kozhemyakin, Influence of ultrasonic vibrations on the growth of semiconductor single crystals. Ultrasonics, 35, p. 599-604 (1998).
https://doi.org/10.1016/S0041-624X(97)00159-5
 
2.    B.N. Zaverukhin, Kh.Kh. Ismailov, R.A. Muminov, N.A. Zaverukhina, Acoustic stimulated adhesion of copper films to silicon. Pis'ma v zhurnal eksperiment. teor. fiziki, 22(15), p. 25-27 (1996), in Russian.
 
3.    N.A. Zaverukhina, B.N. Zaverukhin, A. Kutlimuratov, T.M. Hamraev, Ultrasound and ultraviolet radiation influence on metal covering adhesion in color metals. Conference dedicated to 80-year anni-versary of Academician Saidov, Tashkent, No-vember 24-25, 2010, p. 344-346 (in Russian).
 
4.    I.V. Ostovskyi, A.P. Steblenko, A.B. Nadtochyi, Creation of surface hardening layer in dislocation-free silicon at ultrasound treatment. Fizika i tekhnika poluprovod. 34(3), p. 257-261 (2000), in Russian.
 
5.    V.L. Gromashevskyi, V.V. Diakin, A.E. Salkov, S.M. Skliarov, N.S. Khalimonova, Acoustic-chemical reactions in CdS. Ukr. fizych. zhurnal, 29(4), p. 550-554 (1984), in Russian.
 
6.    I.B. Ermolovich, V.V. Milenin, R.V. Konakova et al., US influence on deformation effects and structure of local centers in substrate and near-contact regions of μ/n-n+-GaAs structures. Fizika i tekhnika poluprovod. 31(4), p. 503-508 (1997), in Russian.
 
7.    A.P. Zdebskyi, M.I. Lysianskyi, N.B. Lukianchykova, M.K. Sheikman, US influence on current-bias and noise characteristics of tunnel diodes GaAs. Pis'ma v zhurnal eksperiment. teor. fiziki, 13(16), p. 1009-1012 (1987), in Russian.
 
8.    I.O. Lysiuk, Ya.M. Olikh, O.Ya. Olikh, G.V. Be-ketov, Peculiarities of US in dislocation absorption in sub-block free CdHgTe crystals. Ukr. fizych. zhurnal, 59(1), p. 50-57 (2014), in Ukrainian.
 
9.    P.I. Baranskyi, A.E. Beliaev, S.M. Komirenko, N.V. Shevchenko, Mechanism of charge currier mobility change under US treatment of semiconducting solid solutions. Fizika tverdogo tela, 38(7), p. 2159-2162 (1990), in Russian.
 
10.    A.A. Kusov, Parametric resonance among elastic wave and own vibrations of anharmonic heterogeneity in solids. Fizika tverdogo tela, 29(5), p. 1574-1575 (1987), in Russian.
 
11.    A.A. Kusov, A.M. Kondirov, A. Chmel, Own mechanism of emergence of defect embryonic under laser irradiation. Fizika tverdogo tela, 30(5), p. 1364-1369 (1988), in Russian.
 
12.    P.G. Litovchenko, V.G. Makarenko, V.Ya. Opylat, V.P. Tartachnyk, I.I. Tychyna, Conductivity relaxation in irradiated gallium phosphide. Ukr. fizych. zhurnal, 33(3), p. 367-390 (1988), in Russian.
 
13.    Yu.A. Tkhoryk, L.S. Khasan, Elastic Deformation and Inconsistency Dislocations in Heteroepitaxial Systems. Kyiv, Naukova Dumka, 1983, p. 304 (in Russian).
 
14.    W.A. Brantley, O.I. Lorimor, P.D. Dapkus, S.E. Haszko and R.H. Saul, Effect of dislocations on green electroemitting efficiency in GaP grown by liquid phase epitaxy. J. Appl. Phys. 46(6), p. 2629-2637 (1975).
https://doi.org/10.1063/1.321941
 
15.    A.I. Vlasenko, Ya. M. Olikh, R.K. Savkina, Acous-tic stimulated activation of bound defects in solid solutions CaHgTe. Fizika i tekhnika poluprovod. 33(4), p. 410-414 (1999), in Russian.
 
16.    C.E. Barnes, Effects of gamma irradiation on epitaxial GaAs laser diodes. Phys. Rev. B, 1(12), p. 4735-4747 (1970).
https://doi.org/10.1103/PhysRevB.1.4735
 
17.    O. Ya. Olikh, I.V. Ostrovskyi, Increase of electron diffusion length in p-type silicon under ultrasound action. Fizika tverdogo tela, 44(6), p 1198-1202 (2002), in Russian.
 
18.    V.F. Machulin, Ya.M. Lepikh, Ya.M. Olikh, B.M. Romaniuk, Acoustic-ionic and acoustic-electronic technologies. Visnyk NAS of Ukraine, 5, p. 7-8 (2007), in Ukrainian.
 
19.    R.S. Savkina, Recent progress in semiconductor properties engineering by ultrasonication. Recent Patents on Electrical and Electronic Engineering, 6(3), p. 1-16 (2013).
https://doi.org/10.2174/22131116113066660008
 
20.    I.G. Pashaiev. Elektronnyi nauch. zhurnal "Issledovania tekhnicheskykh nauk", 2(4), p. 1-13 (2012), in Russian.