1.
G.N. Kozhemyakin, Influence of ultrasonic vibrations on the
growth of semiconductor single crystals. Ultrasonics, 35, p. 599-604
(1998). https://doi.org/10.1016/S0041-624X(97)00159-5
2. B.N. Zaverukhin, Kh.Kh. Ismailov, R.A.
Muminov, N.A. Zaverukhina, Acoustic stimulated adhesion of copper films
to silicon. Pis'ma v zhurnal eksperiment. teor. fiziki, 22(15), p.
25-27 (1996), in Russian.
3. N.A. Zaverukhina, B.N. Zaverukhin, A.
Kutlimuratov, T.M. Hamraev, Ultrasound and ultraviolet radiation
influence on metal covering adhesion in color metals. Conference
dedicated to 80-year anni-versary of Academician Saidov, Tashkent,
No-vember 24-25, 2010, p. 344-346 (in Russian).
4. I.V. Ostovskyi, A.P. Steblenko, A.B.
Nadtochyi, Creation of surface hardening layer in dislocation-free
silicon at ultrasound treatment. Fizika i tekhnika poluprovod. 34(3),
p. 257-261 (2000), in Russian.
5. V.L. Gromashevskyi, V.V. Diakin, A.E.
Salkov, S.M. Skliarov, N.S. Khalimonova, Acoustic-chemical reactions in
CdS. Ukr. fizych. zhurnal, 29(4), p. 550-554 (1984), in Russian.
6. I.B. Ermolovich, V.V. Milenin, R.V.
Konakova et al., US influence on deformation effects and structure of
local centers in substrate and near-contact regions of μ/n-n+-GaAs
structures. Fizika i tekhnika poluprovod. 31(4), p. 503-508 (1997), in
Russian.
7. A.P. Zdebskyi, M.I. Lysianskyi, N.B.
Lukianchykova, M.K. Sheikman, US influence on current-bias and noise
characteristics of tunnel diodes GaAs. Pis'ma v zhurnal eksperiment.
teor. fiziki, 13(16), p. 1009-1012 (1987), in Russian.
8. I.O. Lysiuk, Ya.M. Olikh, O.Ya. Olikh,
G.V. Be-ketov, Peculiarities of US in dislocation absorption in
sub-block free CdHgTe crystals. Ukr. fizych. zhurnal, 59(1), p. 50-57
(2014), in Ukrainian.
9. P.I. Baranskyi, A.E. Beliaev, S.M.
Komirenko, N.V. Shevchenko, Mechanism of charge currier mobility change
under US treatment of semiconducting solid solutions. Fizika tverdogo
tela, 38(7), p. 2159-2162 (1990), in Russian.
10. A.A. Kusov, Parametric resonance
among elastic wave and own vibrations of anharmonic heterogeneity in
solids. Fizika tverdogo tela, 29(5), p. 1574-1575 (1987), in Russian.
11. A.A. Kusov, A.M. Kondirov, A. Chmel,
Own mechanism of emergence of defect embryonic under laser irradiation.
Fizika tverdogo tela, 30(5), p. 1364-1369 (1988), in Russian.
12. P.G. Litovchenko, V.G. Makarenko,
V.Ya. Opylat, V.P. Tartachnyk, I.I. Tychyna, Conductivity relaxation in
irradiated gallium phosphide. Ukr. fizych. zhurnal, 33(3), p. 367-390
(1988), in Russian.
13. Yu.A. Tkhoryk, L.S. Khasan, Elastic
Deformation and Inconsistency Dislocations in Heteroepitaxial Systems.
Kyiv, Naukova Dumka, 1983, p. 304 (in Russian).
14. W.A. Brantley, O.I. Lorimor, P.D.
Dapkus, S.E. Haszko and R.H. Saul, Effect of dislocations on green
electroemitting efficiency in GaP grown by liquid phase epitaxy. J.
Appl. Phys. 46(6), p. 2629-2637 (1975). https://doi.org/10.1063/1.321941
15. A.I. Vlasenko, Ya. M. Olikh, R.K.
Savkina, Acous-tic stimulated activation of bound defects in solid
solutions CaHgTe. Fizika i tekhnika poluprovod. 33(4), p. 410-414
(1999), in Russian.
16. C.E. Barnes, Effects of gamma
irradiation on epitaxial GaAs laser diodes. Phys. Rev. B, 1(12), p.
4735-4747 (1970). https://doi.org/10.1103/PhysRevB.1.4735
17. O. Ya. Olikh, I.V. Ostrovskyi,
Increase of electron diffusion length in p-type silicon under
ultrasound action. Fizika tverdogo tela, 44(6), p 1198-1202 (2002), in
Russian.
18. V.F. Machulin, Ya.M. Lepikh, Ya.M.
Olikh, B.M. Romaniuk, Acoustic-ionic and acoustic-electronic
technologies. Visnyk NAS of Ukraine, 5, p. 7-8 (2007), in Ukrainian.
19. R.S. Savkina, Recent progress in
semiconductor properties engineering by ultrasonication. Recent Patents
on Electrical and Electronic Engineering, 6(3), p. 1-16 (2013). https://doi.org/10.2174/22131116113066660008
20. I.G. Pashaiev. Elektronnyi nauch.
zhurnal "Issledovania tekhnicheskykh nauk", 2(4), p. 1-13 (2012), in
Russian.