Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 1. P. 034-038.
DOI: https://doi.org/10.15407/spqeo19.01.034

Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
O.V. Konoreva1, M.V. Lytovchenko1, Ye.V. Malyi1, Ya.M. Olikh2, I.V. Petrenko1, M.B. Pinkovska1, V.P. Tartachnyk1

1Institute for Nuclear Research, NAS of Ukraine, 47, prospect Nauky, 03680 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine Corresponding author: phone +38(044)-525-37-49; e-mail: evgen.malyj@gmail.com

Abstract. The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.

Keywords: GaAs1–хPх, GaP, LED, ultrasound, US-treatment, irradiation, dislocations, electroluminescence, defects of dark lines, dark spots’ defects.

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